ics for mobile communication 1 publication date: october 2002 sdm00001beb AN6080FHN modulator ic for cdma system cellular telephone overview the AN6080FHN is a modulator ic for a cellu- lar telephone, integrating a quadrature modulator for transmitting of cdma system for the domestic market and a gain control amplifier on a single chip. features ? current consumption: 26 ma typ. ? wide output power control range: ? 8 dbm to ? 90 dbm ? good linearity of output power and control voltage ? small temperature dependency: 3 db applications ? cellular telephone (cdma system) qfn016-p-0304a (lead-free package) unit: mm block diagram 3-c 0.50 r0.30 (0.85) 3.00 0.10 2.00 0.10 (0.33) 3.20 0.10 0.80 max. (3.00) (0.42) (4.00) 4.20 0.10 (1.35) (0.15) 0.60 0.10 (0.58) (0.55) 0.20 0.06 seating plane 1 4 5 12 9 13 16 8 1 4 5 12 9 13 16 8 0.20 0.10 0.10 0.50 m 0.10 2nd local sleep b.b gnd i in gain control gca v cc pa v cc if out x 12 8 7 6 5 13 14 15 16 11 10 9 1 2 3 4 ix in b.b v cc q in qx in n.c. pa gnd gca gnd if out 1/2 /2 gca ctrl gca
AN6080FHN 2 sdm00001beb pin descriptions absolute maximum ratings parameter symbol rating unit supply voltage v cc 4.2 v supply current i cc 40 ma power dissipation * 2 p d 100 mw operating ambient temperature * 1 t opr ? 30 to + 85 c storage temperature * 1 t stg ? 55 to + 125 c recommended operating range parameter symbol range unit supply voltage v cc 2.55 to 4.00 v pin no. description 1 signal output ( ? ) 2 power supply (output) 3 power supply (gca) 4 gain adjustment 5 q input 6 q input 7 power supply (base band) 8 i input pin no. description 9 i input 10 gnd (base band) 11 local signal input 12 sleep mode changeover 13 n.c. 14 gnd (gca) 15 gnd (output) 16 signal output ( + ) electrical characteristics at t a = 25 c unless otherwise specified, v cc = 2.8 v, v slp = 2.8 v, sw1 = a (refer to " application circuit examples"), v lo = ? 7.5 dbm: f = 333.7 mhz, v i , v ix , v q , v qx (dc operating point voltage for each input) = 1.5 v, input signal is 700 khz sine wave, amplitude 900 mv[p-p] (single phase), phase i: 0 , ix: 180 , q: 90 and qx: 270 . parameter symbol conditions min typ max unit current consumption i tot no input 17 26 33 ma current consumption (sleep) i slp no input, sw1 = b ? 010 a refer to " application circuit examples" output level 1 p o(1) v gc = 1.85 v ? 13 ? 11 ? dbm iq input is oqpsk (based on is-95) output level 2 p o(2) v gc = 1.3 v ? 47 ? 42 ? 37 dbm iq input is oqpsk (based on is-95) output level 3 p o(3) v gc = 0.5 v ?? 90 ? 83 dbm iq input is oqpsk (based on is-95) note) * 1: except for the operating ambient temperature and storage temperature, all ratings are for t a = 25 c. * 2: p d is the value at t a = 85 c without a heatsink. use this device within the range of allowable power dissipation referring to " technical data ? p d ? t a curves of qfn016-p-0304".
AN6080FHN 3 sdm00001beb electrical characteristics at t a = 25 c (continued) unless otherwise specified, v cc = 2.8 v, v slp = 2.8 v, sw1 = a (refer to " application circuit examples"), v lo = ? 7.5 dbm: f = 333.7 mhz, v i , v ix , v q , v qx (dc operating point voltage for each input) = 1.5 v, input signal is 700 khz sine wave, amplitude 900 mv[p-p] (single phase), phase i: 0 , ix: 180 , q: 90 and qx: 270 . parameter symbol conditions min typ max unit output level dependency on dp o v gc = 1.85 v, output level variation ? 1.2 0 1.2 db supply voltage from v cc = 2.7 v to 2.9 v in-band output deviation ? p o level deviation at output over 1.23 ? 0.5 0 0.5 db mhz inband carrier leak 1 ? cl1 v gc = 1.8 v, iq input operating point ?? 35 ? 25 dbc (dc) is no adjustment image leak 1 ? il1 v gc = 1.8 v, iq input operating point ?? 35 ? 25 dbc (dc) is no adjustment gain adjustment sensitivity gca gain variation amount from v gc = 0.5 55 60 65 db/v v to 1.85 v gain variation range ? g gain variation amount from v gc = 0.5 73 80 ? db v to 1.85 v local signal input level v lo ? 17 ? 7.5 ? 4dbm sleep control (low) v slp(1) voltage when i tot becomes 10 a or ?? 0.2 v less sleep control (high) v slp(2) voltage at which ic comes to operate 2.3 ?? v gain adjustment voltage v gc 0.1 ? 2.6 v ? design reference data note) the characteristics listed below are theoretical values based on the ic design and are not guaranteed. parameter symbol conditions min typ max unit carrier leak 2 ? cl2 v gc = 1.8 v, ? 20c to 90c, when iq ?? 35 ? 30 dbc input operating point (dc) is adjusted, adjustment range is within 15 mv image leak 2 ? il2 v gc = 1.8 v, ? 20c to 90c, when iq ?? 35 ? 25 dbc input operating point (dc) is adjusted, adjustment range is within 15 mv adjacent channel leak power acp(1) input is oqpsk (based on is-95) at ?? 58 ? 50 dbc suppression 1 (900 khz detuning ) ? 13.5 dbm output (single phase) and ? 20c to 90c adjacent channel leak power acp(2) input is oqpsk (based on is-95) at ?? 66 ? 60 dbc suppression 2 (1.98 mhz detuning ) ? 13.5 dbm output (single phase) and ? 20c to 90c in-band noise 1 n(1) noise level in center frequency 630 ?? 141 ? 135 dbm/hz khz at ? 28 dbm output(single phase) and ? 20c to 90c in-band noise 2 n(2) noise level in center frequency 630 ?? 165 ? 160 dbm/hz khz at ? 76.5 dbm output(single phase) and ? 20c to 90c
AN6080FHN 4 sdm00001beb electrical characteristics at t a = 25 c (continued) unless otherwise specified, v cc = 2.8 v, v slp = 2.8 v, sw1 = a (refer to " application circuit examples"), v lo = ? 7.5 dbm: f = 333.7 mhz, v i , v ix , v q , v qx (dc operating point voltage for each input) = 1.5 v, input signal is 700 khz sine wave, amplitude 900 mv[p-p] (single phase), phase i: 0 , ix: 180 , q: 90 and qx: 270 . ? design reference data (continued) note) the characteristics listed below are theoretical values based on the ic design and are not guaranteed. parameter symbol conditions min typ max unit gain deviation ? gerr output level deviation at 27c as reference, ? 30 + 3db ? 20c to 90c, v gc = 0.5 v to 1.85 v rise time 1 t r1 time so as to get 90% or more output ? 50 100 s when v cc , v slp are from 0 v to 2.8 v rise time 2 t r2 v cc is fixed at 2.8 v ? 30 80 s time so as to get 90% or more output when v slp are from 0 v to 2.8 v fall time 1 t d1 time so as to get 10% or less output ? 20 70 s when v cc , v slp are from 2.8v to 0v fall time 2 t d2 v cc is fixed at 2.8 v ? 50 100 s time so as to get 10% or less output when v slp are from 2.8 v to 0 v gain adjustment pin z gc impedance between pin 4 and gnd 65 110 ? k ? input impedance iq input pin z iq impedance between each pin of pin 5, 15 21 ? k ? input impedance pin 6, pin 8 and 9 pin and gnd output level 4 p o(4) v gc = 1.85 v ? 10 ? 8 ? dbm single phase output level at pin 16 iq input is oqpsk (based on is-95) output level 5 p o(5) v gc = 1.3 v ? 44 ? 39 ? 34 dbm single phase output level at pin 16 iq input is oqpsk (based on is-95) output level 6 p o(6) v gc = 0.5 v ?? 87 ? 80 dbm single phase output level at pin 16 iq input is oqpsk (based on is-95) terminal equivalent circuits pin no. equivalent ci rcuit description dc voltage (v) 1 signal output ( ? ): ? output pin (reverse) of if signal. 2 ? power supply (output): ? power supply pin of output amplifier. 23 200 ? v cc note) the characteristics listed above are theoretical values based on the ic design and are not guaranteed.
AN6080FHN 5 sdm00001beb terminal equivalent circuits (continued) pin no. equivalent ci rcuit description dc voltage (v) 3 ? power supply (gca): ? power supply pin of gca system. 4 gain adjustment : 0 adjust the gain. the voltage from 0 v to supply voltage can be applied. 5, 6 pin 5: q input; pin 6: q input: ? pin to input the q signal (differential). apply dc bias voltage (1.5 v) to each pin. 7 ? power supply (base band): ? supply voltage pin of base band system. 8, 9 pin 8: i input; pin 9: i input: ? pin to input the i signal (differential). apply dc bias voltage (1.5 v) to each pin. 10 ? gnd (base band): ? ground pin of base band system. 11 local signal input: 2.7 input pin of local signal for iq modulation. 12 sleep: ? operating mode: connect this pin to supply voltage pin. sleep mode: connect to gnd. 10.5 k ? 10.5 k ? 21 k ? 7 8 10.5 k ? 10.5 k ? 21 k ? 5 6 73 k ? 37 k ? v cc 4 11 2 k ? v cc 12 150 k ? note) the characteristics listed above are theoretical values based on the ic design and are not guaranteed.
AN6080FHN 6 sdm00001beb terminal equivalent circuits (continued) pin no. equivalent ci rcuit description dc voltage (v) 13 ? n.c. ? 14 ? gnd (gca): ? ground pin of gca system. 15 ? gnd (output): ? ground pin of output amplifier. 16 signal output ( + ): ? output pin of if signal. 16 200 ? v cc technical data 1. p d ? t a curves of qfn016-p-0304a p d ? t a power dissipation p d (w) 0.000 0 25 50 75 100 125 ambient temperature t a ( c) 0.600 0.584 0.500 0.400 0.300 0.200 0.251 0.100 mounted on standard board (glass epoxy: 50 mm 50 mm t 0.8 mm) r th(j-a) = 171.2 c/w independent ic without a heat shink r th(j-a) = 397.4 c/w usage note there are three systems (pin 2, pin 3 and pin 7) of supply voltage pins in this product. apply the same voltage at the same time to these three pins on use. (when power supply is switched to on or off, it must be done at the same time for these three pins. never use with off for any pins.) note) the characteristics listed above are theoretical values based on the ic design and are not guaranteed.
AN6080FHN 7 sdm00001beb technical data (continued) 2. main characteristics (gain control characteristics in the " application circuit example 1. bi-phase output circuit") output level ? gc characteristics output level ? gc temperature characteristics (t a = ? 20 c, 27 c, 90 c) (27 c as reference) output level ? gc characteristic (bi-phase ? single phase output) balance transformer insertion loss (s21) ? 120 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 ? 70 ? 80 ? 90 ? 100 ? 110 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gc (v) output level (dbm) ? 10 10 8 6 4 2 0 ? 2 ? 4 ? 6 ? 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gc (v) output level difference (db) t a = ? 20 c t a = 90 c ? 120 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 ? 70 ? 80 ? 90 ? 100 ? 110 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gc (v) output (dbm) bi-phase-single phase (db) 6 5 4 3 2 1 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 6 single phase output bi-phase-single phase output bi-phase output ? 50 50 40 30 20 10 0 ? 10 ? 20 ? 30 ? 40 50 75 100 125 150 175 200 225 250 275 300 frequency (mhz) [balance transformer insertion loss measuring circuit] balance transformer insertion loss (db) v 50 ? 50 ? 10 pf 10 pf marker: 167.4 mhz ? 3.4429 db
AN6080FHN 8 sdm00001beb application circuit examples 1. bi-phase output circuit 2nd local sleep b.b gnd i out v i gain control gca v cc pa v cc if out x 12 8 7 6 5 13 14 15 16 11 10 9 1 2 3 4 v ix v q v qx v gc b.b v cc q out qx out v slp v lo sw1 gca gnd pa gnd if out iq signal source ab 1 000 pf 1 000 pf 1 000 pf 1 000 pf 1 000 pf 1 000 pf 0.01 f 0.01 f 0.01 f i cc , i slp 3.3 f 50 ? 50 ? ix out v cc balance transformer 1/2 /2 gca ctrl gca n.c. p out
AN6080FHN 9 sdm00001beb application circuit examples (continued) 2. single phase output circuit 2nd local sleep gain control pa v cc if out x 12 8 7 6 5 13 14 15 16 11 10 9 1 2 3 4 v ix v q v qx v gc b.b v cc q out qx out v slp v lo sw1 gca gnd pa gnd if out ab 1 000 pf 1 000 pf 1 000 pf 1 000 pf 15 pf (33 + 33) nh 0.01 f 0.01 f i cc , 3.3 f 50 ? 50 ? ix out v cc b.b gnd i out v i gca v cc 1/2 /2 gca ctrl gca n.c. p out i slp 0.01 f iq signal source
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